Advancing DRAM Test Reliability: Circuit Design Breakthroughs
- admin
- 2023-12-07
- 1148
- Published in IEEE Transactions on
Instrumentation and Measurement (IF: 5.6, JCR: 86.5%) -
The
research team of Professor Juhyeong Chae (Department of Electronics &
Communications Engineering) successfully developed a circuit design technology
to improve the test reliability of low-speed wafer testing, which is part of
the DRAM mass production test processes.
The research was supported by government
funding (Ministry of Science and ICT) through the Institute for Information
& Communications Technology Promotion (IITP)’s 'PIM Artificial Intelligence Semiconductor
Core Technology Development Project' (2022-0-01013;
Edge Computing Enhanced DRAM PIM Semiconductor Technology Development,
2022-0-01037; High-performance PIM Memory Semiconductor Technology Development
based on DRAM), the 'Wireless Mobile Future Leading Technology Development
Project' of the National Research Foundation of Korea (NRF-2021M1B3A3102358;
Development and Demonstration of 433MHz-based Drone Communication Technology),
and support from the University's Excellent Researcher Support Program. The
research results were published in the prestigious international academic
journal, IEEE Transactions on Instrumentation and Measurement (IF: 5.6, JCR:
86.5%), under the title "Design of Clocked Comparator Preventing Bit
Errors to Improve Reliability of Low-Speed DRAM Measurement."
*Web Link: https://doi.org/10.1109/TIM.2023.3318687