Views 134 | Created 2024.12.09 | Modified 2024.12.09 | Public Relations Team

·         Professor Ha Tae-Jun's Research Team (Department of Electronic Materials Engineering) Identifies Charge Transfer Mechanism in High-Mobility Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Atomic Layer Deposition

 (From left) Park Sang-Jun (Integrated Master’s and Ph.D. Program), Park Sae-Ryong (Integrated Master’s and Ph.D. Program), Professor Ha Tae-Jun

Professor Ha Tae-Jun's research team (Department of Electronic Materials Engineering) at our university successfully fabricated high-mobility indium-gallium-zinc oxide (IGZO) thin-film transistors using atomic layer deposition. Through a comparative analysis of the temperature-dependent mobility characteristics and time-domain transient behavior of IGZO thin-film transistors fabricated using solution processes and sputtering, the team successfully identified the charge transfer mechanism. The results of this research were published in the Journal of Materials Chemistry C (IF: 5.7, JIF Ranking: 80.7%), a renowned international journal in the field of applied physics issued by the Royal Society of Chemistry. The paper, titled "Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition," was also featured on the Outside Back Cover.

 (Reference: https://doi.org/10.1039/D4TC03560G)

Various methods, such as solution processing, sputtering, and atomic layer deposition, are being used to deposit IGZO thin films, the most widely used oxide semiconductor for the channel layer in oxide thin-film transistors. However, the charge transfer characteristics of IGZO thin-film transistors fabricated using atomic layer deposition do not align with conventional analytical models, and comparative studies on the charge transfer properties of oxide thin-film transistors based on different deposition methods remain insufficient. In response, Professor Ha Tae-Jun's research team (Department of Electronic Materials Engineering) conducted a comparative analysis of the material properties of oxide semiconductor channel layers based on different deposition methods. Through steady-state DC analysis and time-domain transient analysis, they successfully and systematically identified the mechanism behind high-mobility charge transfer characteristics.

Outside Back Cover published in Journal of Materials Chemistry C

This research, meanwhile, is a result of the Interactive Display Research Center, where Professor Ha Tae-Jun serves as the director, as part of the University Innovation Future Challenge project. This research was carried out with support from the Small and Medium Business Technology Innovation Development Program, led by the Ministry of SMEs and Startups, and the Carbon Neutral Industry Core Technology Development Program, led by the Ministry of Trade, Industry, and Energy. As part of an 8-year project running from 2023 to 2030 with Samsung Display as the demand-side company, Professor Ha Tae-Jun's research team is responsible for developing oxide semiconductor transistor devices and processes.

Professor Ha Tae-Jun's research team is conducting extensive studies on applying oxide semiconductors to next-generation display backplanes. Through their work on devices and processes, the team has published over 60 SCI journal papers and holds more than 30 international and domestic patents. The first author, Park Sang-Jun, a student in the integrated Master’s and Ph.D. program, joined the IT Development Team of Samsung Display's Small and Medium-Sized Display Business Unit after earning his Ph.D. from our university this past August. Meanwhile, Park Sae-Ryong is actively conducting research on core technologies related to next-generation semiconductor materials and electronic application devices.