160 views | Created on 2025.01.09 | Modified on 2025.01.09 | Public Relations Team

·         Professor Ha Taejoon (Department of Electronic Materials Engineering)’s Research Team Develops an Oxide Memtransistor with Contact Engineering Applied

Enabling Neuromorphic Computing with High Linearity and Precision

- Published in Small (IF: 13, JIF ranking: top 7%), a leading international journal in materials science -

Professor Ha Taejoon (Department of Electronic Materials Engineering) and his research team, in collaboration with Professor Kim Younghoon’s team from Sungkyunkwan University and Professor Park Sungkyu’s team from Chung-Ang University, successfully developed an indium-gallium-zinc oxide (IGZO)-based oxide memtransistor with contact engineering applied. This breakthrough enabled the implementation of neuromorphic computing with high linearity and precision. The results of this study were published in Small (IF: 13, JIF ranking: top 7%), a leading international journal in materials science published by WILEY, under the title “Contact-Engineered Oxide Memtransistors for Homeostasis-Based High-Linearity and Precision Neuromorphic Computing.”

 (Reference: https://doi.org/10.1002/smll.202409510)

Recently, neuromorphic computing has garnered significant global attention due to its numerous advantages, including ultra-low power consumption, parallel processing, and environmental adaptability. The discovery of Hebbian rules has advanced our understanding of neural development and learning processes; however, it poses challenges for neuromorphic system development as it cannot perfectly replicate learning mechanisms. In response, Professor Ha Taejoon (Department of Electronic Materials Engineering) and his research team, in collaboration with Professor Kim Younghoon’s team from Sungkyunkwan University and Professor Park Sungkyu’s team from Chung-Ang University, successfully developed an oxide semiconductor memtransistor with contact engineering applied. This breakthrough enables the device to replicate both Hebbian and homeo-plasticity mechanisms while performing various memory functions. The fabricated IGZO memtransistor demonstrated a high current switching ratio of over 10⁴ and stable operation even after 100 cycles of repetition. It also exhibited excellent memory characteristics and achieved a high recognition accuracy of 91.77% for numeric images through synaptic scaling adaptation, mimicking homeostasis.

Professor Ha Taejoon's research team has a strong track record in oxide semiconductors and insulating materials, with over 40 SCI journal publications and more than 20 patents. Their work spans advanced materials-based next-generation electronic device design and process development.

Contact-Engineered IGZO Memtransistor Device Structure, Long-Term and Short-Term Memory Mimicry, and Image Recognition Accuracy Analysis